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| savantic semiconductor product specification silicon npn power transistors BUW49 d escription with to-3pn package. high current capability. fast switching speed. low collector saturation voltage applications switching regulators. motor control. high frequency and efficency converters pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 30 a i cm collector current (pulse) 40 a i b base current 6 a i bm base current (peak) 10 a p c collector power dissipation t c =25 150 w t j junction temperature 175 t stg storage temperature -65~175 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUW49 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0;l=25mh 80 v v cesat-1 collector-emitter saturation voltage i c =40a; i b =4a 1.4 v v cesat-2 collector-emitter saturation voltage i c =30a; i b =3a 1.2 v v besat base-emitter saturation voltage i c =30a; i b =3a 2.0 v i cex collector cut-off current v ce =rated ;v be =-1.5v t c =125 1 3 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma f t transition frequency v ce =15v,f=15mhz;i c =1a 8 switching times : t on turn-on time 0.8 1.2 s t s storage time 0.6 1.1 s t f fall time i c =30a; i b1 =- i b2 =4a v cc =80v 0.15 0.25 s thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 1 /w savantic semiconductor product specification 3 silicon npn power transistors BUW49 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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